nl6b04713_si_001.pdf (2.13 MB)
Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels
journal contribution
posted on 2017-03-23, 00:00 authored by Renjie Chen, Katherine L. Jungjohann, William M. Mook, John Nogan, Shadi A. DayehAlloyed and compound contacts between
metal and semiconductor transistor channels enable self-aligned gate
processes which play a significant role in transistor scaling. At
nanoscale dimensions and for nanowire channels, prior experiments
focused on reactions along the channel length, but the early stage
of reaction in their cross sections remains unknown. Here, we report
on the dynamics of the solid-state reaction between metal (Ni) and
semiconductor (In0.53Ga0.47As), along the cross-section
of nanowires that are 15 nm in width. Unlike planar structures where
crystalline nickelide readily forms at conventional, low alloying
temperatures, nanowires exhibit a solid-state amorphization step that
can undergo a crystal regrowth step at elevated temperatures. In this
study, we capture the layer-by-layer reaction mechanism and growth
rate anisotropy using in situ transmission electron microscopy (TEM).
Our kinetic model depicts this new, in-plane contact formation which
could pave the way for engineered nanoscale transistors.
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semiconductor transistor channelsContact Formationlayer-by-layer reaction mechanismnanoscale transistorschannel lengthnanowire channelscompound contactsnanoscale dimensionsgrowth rate anisotropynanowires exhibitTEMamorphization stepself-aligned gate processestransmission electron microscopy15 nmAtomic Scale Dynamics0.53 Ga 0.47InGaAs Nanowire Channels Alloyedcrystal regrowth stepalloying temperaturesin-plane contact formation
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