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Analog and Digital Bipolar Resistive Switching in Solution-Combustion-Processed NiO Memristor
journal contribution
posted on 2018-07-11, 19:37 authored by Ya Li, Jinxing Chu, Weijie Duan, Guangshuo Cai, Xihua Fan, Xinzhong Wang, Gang Wang, Yanli PeiIn this study, a NiO-based resistive
memristor was manufactured using a solution combustion method. In
this device, both analog and digital bipolar resistive switching were
observed. They are dependent on the stressed bias voltage. Prior to
the electroforming, the analog bipolar resistive switching was realized
through the change of the Schottky barrier at p-type NiO/Ag junction
by the local migration of the oxygen ion in the interface. On the
basis of the analog resistive switching, several synaptic functions
were demonstrated, such as nonlinear transmission characteristics,
spike-rate-dependent plasticity, long-term/short-term memory, and
“learning-experience”
behavior. In addition, once the electroforming operation was carried
out using a high applied voltage, the resistive switching was changed
from analog to digital. The formation and rupture of the oxygen vacancy
filaments is dominant. This novel memristor with the multifunction
of analog and digital resistive switching is expected to decrease
the manufacturing complexity of the electrocircuits containing analog/digital
memristors.
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Schottky barriersolution combustion methodanalog bipolarelectroforming operationoxygen ionnonlinear transmission characteristicsmanufacturing complexitynovel memristorsynaptic functionsoxygen vacancy filamentsbias voltageDigital Bipolar Resistive SwitchingSolution-Combustion-Processed NiO Memristorspike-rate-dependent plasticity
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