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A Facile Space-Confined Solid-Phase Sulfurization Strategy for Growth of High-Quality Ultrathin Molybdenum Disulfide Single Crystals
journal contribution
posted on 2018-01-19, 00:00 authored by Dawei Li, Zhiyong Xiao, Sai Mu, Fei Wang, Ying Liu, Jingfeng Song, Xi Huang, Lijia Jiang, Jun Xiao, Lei Liu, Stephen Ducharme, Bai Cui, Xia Hong, Lan Jiang, Jean-Francois Silvain, Yongfeng LuSingle-crystal transition metal dichalcogenides (TMDs) and TMD-based
heterojunctions have recently attracted significant research and industrial
interest owing to their intriguing optical and electrical properties.
However, the lack of a simple, low-cost, environmentally friendly,
synthetic method and a poor understanding of the growth mechanism
post a huge challenge to implementing TMDs in practical applications.
In this work, we developed a novel approach for direct formation of
high-quality, monolayer and few-layer MoS2 single crystal
domains via a single-step rapid thermal processing of a sandwiched
reactor with sulfur and molybdenum (Mo) film in a confined reaction
space. An all-solid-phase growth mechanism was proposed and experimentally/theoretically
evidenced by analyzing the surface potential and morphology mapping.
Compared with the conventional chemical vapor deposition approaches,
our method involves no complicated gas-phase reactant transfer or
reactions and requires very small amount of solid precursors [e.g.,
Mo (∼3 μg)], no carrier gas, no pretreatment of the precursor,
no complex equipment design, thereby facilitating a simple, low-cost,
and environmentally friendly growth. Moreover, we examined the symmetry,
defects, and stacking phase in as-grown MoS2 samples using
simultaneous second-harmonic-/sum-frequency-generation (SHG/SFG) imaging.
For the first time, we observed that the SFG (peak intensity/position)
polarization can be used as a sensitive probe to identify the orientation
of TMDs’ crystallographic axes. Furthermore, we fabricated
ferroelectric programmable Schottky junction devices via local domain
patterning using the as-grown, single-crystal monolayer MoS2, revealing their great potential in logic and optoelectronic applications.
Our strategy thus provides a simple, low-cost, and scalable path toward
a wide variety of TMD single crystal growth and novel functional device
design.
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carrier gasas-grown MoS 2 samplesreaction spacescalable pathfew-layer MoS 2TMD-based heterojunctionsoptoelectronic applicationsmorphology mappingall-solid-phase growth mechanismmethodSHGprecursorsingle-crystal monolayer MoS 2chemical vapor deposition approachesequipment designcrystal growthdomain patterninggrowth mechanism postHigh-Quality Ultrathin Molybdenum Disulfide Single Crystals Single-crystal transition metal dichalcogenidesdevice designnovel approachcrystal domainsSchottky junction devicesgas-phase reactant transferSFGFacile Space-Confined Solid-Phase Sulfurization Strategy
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