Analog
and Digital Bipolar Resistive Switching in Solution-Combustion-Processed
NiO Memristor
Ya Li
Jinxing Chu
Weijie Duan
Guangshuo Cai
Xihua Fan
Xinzhong Wang
Gang Wang
Yanli Pei
10.1021/acsami.8b05749.s001
https://acs.figshare.com/articles/journal_contribution/Analog_and_Digital_Bipolar_Resistive_Switching_in_Solution-Combustion-Processed_NiO_Memristor/6807251
In this study, a NiO-based resistive
memristor was manufactured using a solution combustion method. In
this device, both analog and digital bipolar resistive switching were
observed. They are dependent on the stressed bias voltage. Prior to
the electroforming, the analog bipolar resistive switching was realized
through the change of the Schottky barrier at p-type NiO/Ag junction
by the local migration of the oxygen ion in the interface. On the
basis of the analog resistive switching, several synaptic functions
were demonstrated, such as nonlinear transmission characteristics,
spike-rate-dependent plasticity, long-term/short-term memory, and
“learning-experience”
behavior. In addition, once the electroforming operation was carried
out using a high applied voltage, the resistive switching was changed
from analog to digital. The formation and rupture of the oxygen vacancy
filaments is dominant. This novel memristor with the multifunction
of analog and digital resistive switching is expected to decrease
the manufacturing complexity of the electrocircuits containing analog/digital
memristors.
2018-07-11 19:37:56
Schottky barrier
solution combustion method
analog bipolar
electroforming operation
oxygen ion
nonlinear transmission characteristics
manufacturing complexity
novel memristor
synaptic functions
oxygen vacancy filaments
bias voltage
Digital Bipolar Resistive Switching
Solution-Combustion-Processed NiO Memristor
spike-rate-dependent plasticity