%0 Journal Article %A Liu, Ziheng %A Hao, Xiaojing %A Huang, Jialiang %A Ho-Baillie, Anita %A Green, Martin A. %D 2018 %T Reduction of Threading Dislocation Density in Sputtered Ge/Si(100) Epitaxial Films by Continuous-Wave Diode Laser-Induced Recrystallization %U https://acs.figshare.com/articles/journal_contribution/Reduction_of_Threading_Dislocation_Density_in_Sputtered_Ge_Si_100_Epitaxial_Films_by_Continuous-Wave_Diode_Laser-Induced_Recrystallization/6217118 %R 10.1021/acsaem.7b00130.s001 %2 https://ndownloader.figshare.com/files/11308472 %K low-defect single-crystalline Ge films %K diode laser %K Continuous-Wave Diode Laser-Induced Recrystallization %K recrystallization process %K growth mechanism %K cell applications %K III %K dislocation density %K Threading Dislocation Density %K high-throughput method %K 3 orders %K CW diode laser-induced recrystallization %K TDD %X We have developed a cost-effective, up-scalable, and high-throughput method combining continuous-wave (CW) diode laser and magnetron sputtering for fabricating low-defect single-crystalline Ge films for high-efficiency III–V solar cell applications. CW diode laser-induced recrystallization is demonstrated to dramatically reduce the threading dislocation density (TDD) of sputter-deposited single-crystalline Ge/Si epitaxial films by more than 3 orders of magnitude. This might be due to the change of growth mechanism from initial Ge/Si heteroepitaxy in the sputtering process to Ge/Ge homoepitaxy by the laser-induced lateral recrystallization process, overcoming the typical issue of Ge/Si lattice mismatch to achieve low TDD. %I ACS Publications