10.1021/acs.nanolett.7b00730.s001
Rui Yang
Rui
Yang
Jaesung Lee
Jaesung
Lee
Souvik Ghosh
Souvik
Ghosh
Hao Tang
Hao
Tang
R. Mohan Sankaran
R. Mohan
Sankaran
Christian A. Zorman
Christian A.
Zorman
Philip X.-L. Feng
Philip X.-L.
Feng
Tuning Optical Signatures of Single- and Few-Layer
MoS<sub>2</sub> by Blown-Bubble Bulge Straining up to Fracture
American Chemical Society
2017
single-layer MoS 2
strain-tunable bandgaps
tunable optoelectronics
strain increases
molybdenum disulfide
Few-Layer MoS 2
2 D semiconductors
ultrahigh strain limits
strain-tunable devices
MoS 2
layer semiconducting crystals
PL
Raman spectroscopy
Raman peaks
strain levels
few-layer MoS 2
Blown-Bubble Bulge Straining
anisotropic biaxial strains
Tuning Optical Signatures
layer MoS 2 devices
stretchable substrates
MoS 2 crystals
2017-06-19 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Tuning_Optical_Signatures_of_Single-_and_Few-Layer_MoS_sub_2_sub_by_Blown-Bubble_Bulge_Straining_up_to_Fracture/5179057
Emerging atomic layer
semiconducting crystals such as molybdenum
disulfide (MoS<sub>2</sub>) are promising candidates for flexible
electronics and strain-tunable devices due to their ultrahigh strain
limits (up to ∼20–30%) and strain-tunable bandgaps.
However, high strain levels, controllable isotropic and anisotropic
biaxial strains in single- and few-layer MoS<sub>2</sub> on device-oriented
flexible substrates permitting convenient and fast strain tuning,
remain unexplored. Here, we demonstrate a “blown-bubble”
bulge technique for efficiently applying large strains to atomic layer
MoS<sub>2</sub> devices on a flexible substrate. As the strain increases
via bulging, we achieve continuous tuning of Raman and photoluminescence
(PL) signatures in single- and few-layer MoS<sub>2</sub>, including
splitting of Raman peaks. With proper clamping of the MoS<sub>2</sub> crystals, we apply up to ∼9.4% strain in the flexible substrate,
which causes a doubly clamped single-layer MoS<sub>2</sub> to fracture
at 2.2–2.6% strain measured by PL and 2.9–3.5% strain
measured by Raman spectroscopy. This study opens new pathways for
exploiting 2D semiconductors on stretchable substrates for flexible
electronics, mechanical transducers, tunable optoelectronics, and
biomedical transducers on curved and bulging surfaces.