10.1021/acsomega.7b00360.s001 Yan Fong Ng Yan Fong Ng Nur Fadilah Jamaludin Nur Fadilah Jamaludin Natalia Yantara Natalia Yantara Mingjie Li Mingjie Li Venkata Kameshwar Rao Irukuvarjula Venkata Kameshwar Rao Irukuvarjula Hilmi Volkan Demir Hilmi Volkan Demir Tze Chien Sum Tze Chien Sum Subodh Mhaisalkar Subodh Mhaisalkar Nripan Mathews Nripan Mathews Rapid Crystallization of All-Inorganic CsPbBr<sub>3</sub> Perovskite for High-Brightness Light-Emitting Diodes American Chemical Society 2017 All-Inorganic CsPbBr 3 Perovskite charge confinement EQE PeLED perovskite-based light-emitting diodes gas-facilitated process film growth Solvent engineering green-emitting methylammonium High-Brightness Light-Emitting Diodes Research 0.72 cd NH percolated grains CH 2.4 V Rapid Crystallization all-inorganic perovskite CsPbBr 3 film performance turn-on voltage device film crystallization High reproducibility 2017-06-19 08:13:32 Journal contribution https://acs.figshare.com/articles/journal_contribution/Rapid_Crystallization_of_All-Inorganic_CsPbBr_sub_3_sub_Perovskite_for_High-Brightness_Light-Emitting_Diodes/5117431 Research into perovskite-based light-emitting diodes (PeLEDs) has been rapidly gaining momentum since the initial reports of green-emitting methylammonium lead bromide (CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub>)-based devices were published. However, issues pertaining to its stability and morphological control still hamper progress toward high performing devices. Solvent engineering, a technique typically employed to modulate film crystallization, offers little opportunity for scale-up due to the tendency for inhomogeneous film growth and low degree of reproducibility. Here, we propose and show a simple gas-facilitated process to deposit a stable, all-inorganic perovskite CsPbBr<sub>3</sub> film. The formation of smaller and less percolated grains, which gives rise to enhanced optical properties, highlights the importance of spatial charge confinement in the film. Consequently, the performance of our PeLEDs shows great improvement, with luminance as high as 8218 cd m<sup>–2</sup> and turn-on voltage as low as 2.4 V. Concomitantly, the current efficiency and EQE of our device were increased to 0.72 cd A<sup>–1</sup> and 0.088%, respectively. High reproducibility in the performance of PeLEDs fabricated using this process opens the path for large-area devices.