10.1021/acsomega.7b00360.s001
Yan Fong Ng
Yan Fong
Ng
Nur Fadilah Jamaludin
Nur Fadilah
Jamaludin
Natalia Yantara
Natalia
Yantara
Mingjie Li
Mingjie
Li
Venkata Kameshwar
Rao Irukuvarjula
Venkata Kameshwar
Rao
Irukuvarjula
Hilmi Volkan Demir
Hilmi Volkan
Demir
Tze Chien Sum
Tze Chien
Sum
Subodh Mhaisalkar
Subodh
Mhaisalkar
Nripan Mathews
Nripan
Mathews
Rapid Crystallization of All-Inorganic CsPbBr<sub>3</sub> Perovskite
for High-Brightness Light-Emitting Diodes
American Chemical Society
2017
All-Inorganic CsPbBr 3 Perovskite
charge confinement
EQE
PeLED
perovskite-based light-emitting diodes
gas-facilitated process
film growth
Solvent engineering
green-emitting methylammonium
High-Brightness Light-Emitting Diodes Research
0.72 cd
NH
percolated grains
CH
2.4 V
Rapid Crystallization
all-inorganic perovskite CsPbBr 3 film
performance
turn-on voltage
device
film crystallization
High reproducibility
2017-06-19 08:13:32
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Rapid_Crystallization_of_All-Inorganic_CsPbBr_sub_3_sub_Perovskite_for_High-Brightness_Light-Emitting_Diodes/5117431
Research into perovskite-based light-emitting
diodes (PeLEDs) has
been rapidly gaining momentum since the initial reports of green-emitting
methylammonium lead bromide (CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub>)-based devices were published. However, issues pertaining
to its stability and morphological control still hamper progress toward
high performing devices. Solvent engineering, a technique typically
employed to modulate film crystallization, offers little opportunity
for scale-up due to the tendency for inhomogeneous film growth and
low degree of reproducibility. Here, we propose and show a simple
gas-facilitated process to deposit a stable, all-inorganic perovskite
CsPbBr<sub>3</sub> film. The formation of smaller and less percolated
grains, which gives rise to enhanced optical properties, highlights
the importance of spatial charge confinement in the film. Consequently,
the performance of our PeLEDs shows great improvement, with luminance
as high as 8218 cd m<sup>–2</sup> and turn-on voltage as low
as 2.4 V. Concomitantly, the current efficiency and EQE of our device
were increased to 0.72 cd A<sup>–1</sup> and 0.088%, respectively.
High reproducibility in the performance of PeLEDs fabricated using
this process opens the path for large-area devices.