%0 Journal Article
%A Chen, Mengyu
%A Lu, Haipeng
%A Abdelazim, Nema M.
%A Zhu, Ye
%A Wang, Zhen
%A Ren, Wei
%A Kershaw, Stephen V.
%A Rogach, Andrey L.
%A Zhao, Ni
%D 2017
%T Mercury
Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity
Room-Temperature Photodetection at 2000 nm
%U https://acs.figshare.com/articles/journal_contribution/Mercury_Telluride_Quantum_Dot_Based_Phototransistor_Enabling_High-Sensitivity_Room-Temperature_Photodetection_at_2000_nm/5077849
%R 10.1021/acsnano.7b00972.s001
%2 https://ndownloader.figshare.com/files/8593552
%K detectivity
%K gas-injection synthesis method
%K mercury Telluride Quantum Dot
%K HgTe QDs
%K detection devices
%K phototransistor structure
%K 2.1 μ m
%K epitaxial-grown photodetectors
%K silicon technologies
%K QD photodetectors
%K solution processability
%K 2000 nm Near-to-mid-infrared photodetection technologies
%K performance bottleneck
%K carbon monoxide gas
%K 2 μ m wavelength range
%K room-temperature device response
%K quantum dot
%K QD phototransistor
%K 2 kHz modulation frequency
%K detection technologies
%K photoluminescence quantum
%K technology
%K device engineering
%K scalable fabrication
%K application requirements
%K Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection
%K photoluminescence peak
%K gas concentration
%X Near-to-mid-infrared photodetection
technologies could be widely deployed to advance the infrastructures
of surveillance, environmental monitoring, and manufacturing, if the
detection devices are low-cost, in compact format, and with high performance.
For such application requirements, colloidal quantum dot (QD) based
photodetectors stand out as particularly promising due to the solution
processability and ease of integration with silicon technologies;
unfortunately, the detectivity of the QD photodetectors toward longer
wavelengths has so far been low. Here we overcome this performance
bottleneck through synergistic efforts between synthetic chemistry
and device engineering. First, we developed a fully automated aprotic
solvent, gas-injection synthesis method that allows scalable fabrication
of large sized HgTe QDs with high quality, exhibiting a record high
photoluminescence quantum yield of 17% at the photoluminescence peak
close to 2.1 μm. Second, through gating a phototransistor structure
we demonstrate room-temperature device response to reach >2 ×
1010 cm Hz1/2 W–1 (at 2 kHz
modulation frequency) specific detectivity beyond the 2 μm wavelength
range, which is comparable to commercial epitaxial-grown photodetectors.
To demonstrate the practical application of the QD phototransistor,
we incorporated the device in a carbon monoxide gas sensing system
and demonstrated reliable measurement of gas concentration. This work
represents an important step forward in commercializing QD-based infrared
detection technologies.
%I ACS Publications