Lee, Jin Hee Gul, Hamza Zad Kim, Hyun Moon, Byoung Hee Adhikari, Subash Kim, Jung Ho Choi, Homin Lee, Young Hee Lim, Seong Chu Photocurrent Switching of Monolayer MoS<sub>2</sub> Using a Metal–Insulator Transition We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS<sub>2</sub>) by controlling the metal–insulator transition (MIT). N-type semiconducting MoS<sub>2</sub> under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS<sub>2</sub> is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron–electron scattering. Thus, no photocurrent is detected in metallic MoS<sub>2</sub>. Our results indicate that the photocurrent of MoS<sub>2</sub> can be switched on/off by appropriately controlling the MIT transition by means of gate bias. Monolayer MoS 2;photocurrent;N-type semiconducting MoS 2;monolayer molybdenum disulfide;conduction band;MIT;MoS 2;gate bias 2016-12-28
    https://acs.figshare.com/articles/journal_contribution/Photocurrent_Switching_of_Monolayer_MoS_sub_2_sub_Using_a_Metal_Insulator_Transition/4509764
10.1021/acs.nanolett.6b03689.s001