TY - DATA T1 - Photocurrent Switching of Monolayer MoS2 Using a Metal–Insulator Transition PY - 2016/12/28 AU - Jin Hee Lee AU - Hamza Zad Gul AU - Hyun Kim AU - Byoung Hee Moon AU - Subash Adhikari AU - Jung Ho Kim AU - Homin Choi AU - Young Hee Lee AU - Seong Chu Lim UR - https://acs.figshare.com/articles/journal_contribution/Photocurrent_Switching_of_Monolayer_MoS_sub_2_sub_Using_a_Metal_Insulator_Transition/4509764 DO - 10.1021/acs.nanolett.6b03689.s001 L4 - https://ndownloader.figshare.com/files/7293368 KW - Monolayer MoS 2 KW - photocurrent KW - N-type semiconducting MoS 2 KW - monolayer molybdenum disulfide KW - conduction band KW - MIT KW - MoS 2 KW - gate bias N2 - We achieve switching on/off the photocurrent of monolayer molybdenum disulfide (MoS2) by controlling the metal–insulator transition (MIT). N-type semiconducting MoS2 under a large negative gate bias generates a photocurrent attributed to the increase of excess carriers in the conduction band by optical excitation. However, under a large positive gate bias, a phase shift from semiconducting to metallic MoS2 is caused, and the photocurrent by excess carriers in the conduction band induced by the laser disappears due to enhanced electron–electron scattering. Thus, no photocurrent is detected in metallic MoS2. Our results indicate that the photocurrent of MoS2 can be switched on/off by appropriately controlling the MIT transition by means of gate bias. ER -