Polyarylenesulfonium
Salt as a Novel and Versatile
Nonchemically Amplified Negative Tone Photoresist for High-Resolution
Extreme Ultraviolet Lithography Applications
Pulikanti
Guruprasad Reddy
Satyendra Prakash Pal
Pawan Kumar
Chullikkattil P. Pradeep
Subrata Ghosh
Satinder K. Sharma
Kenneth E. Gonsalves
10.1021/acsami.6b10384.s001
https://acs.figshare.com/articles/journal_contribution/Polyarylenesulfonium_Salt_as_a_Novel_and_Versatile_Nonchemically_Amplified_Negative_Tone_Photoresist_for_High-Resolution_Extreme_Ultraviolet_Lithography_Applications/4498472
The
present report demonstrates the potential of a polyarylenesulfonium
polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate]
(PAS), as a versatile nonchemically amplified negative tone photoresist
for next-generation lithography (NGL) applications starting from i-line
(λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼
13.5 nm) lithography. PAS exhibited considerable contrast (γ),
0.08, toward EUV and patterned 20 nm features successfully.
2016-12-23 00:00:00
Versatile Nonchemically Amplified
PAS
NGL
Tone Photoresist
next-generation lithography
Polyarylenesulfonium Salt
polyarylenesulfonium polymer
tone photoresist
EUV
20 nm features
Ultraviolet Lithography Applications