Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications Pulikanti Guruprasad Reddy Satyendra Prakash Pal Pawan Kumar Chullikkattil P. Pradeep Subrata Ghosh Satinder K. Sharma Kenneth E. Gonsalves 10.1021/acsami.6b10384.s001 https://acs.figshare.com/articles/journal_contribution/Polyarylenesulfonium_Salt_as_a_Novel_and_Versatile_Nonchemically_Amplified_Negative_Tone_Photoresist_for_High-Resolution_Extreme_Ultraviolet_Lithography_Applications/4498472 The present report demonstrates the potential of a polyarylenesulfonium polymer, poly­[methyl­(4-(phenylthio)-phenyl)­sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully. 2016-12-23 00:00:00 Versatile Nonchemically Amplified PAS NGL Tone Photoresist next-generation lithography Polyarylenesulfonium Salt polyarylenesulfonium polymer tone photoresist EUV 20 nm features Ultraviolet Lithography Applications