10.15131/shef.data.3827460.v1
Shiyu Xie
Shiyu
Xie
Xinxin Zhou
Xinxin
Zhou
Shiyong Zhang
Shiyong
Zhang
DAVID J. THOMSON
DAVID J.
THOMSON
Xia Chen
Xia
Chen
GRAHAM T. REED
GRAHAM T.
REED
Jo Shien Ng
Jo Shien
Ng
Chee Tan
Chee
Tan
Data for paper: InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product
The University of Sheffield
2016
Avalanche photodiodes, AlGaAsSb, Gain-bandwidth product
Compound Semiconductors
2016-09-16 09:21:18
Dataset
https://orda.shef.ac.uk/articles/dataset/Data_for_paper_InGaAs_AlGaAsSb_avalanche_photodiode_with_high_gain-bandwidth_product/3827460
<p>The files correspond to experimental results in
paper (accepted by Optics Express): “InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product” <a href="https://doi.org/10.1364/OE.24.024242">DOI: 10.1364/OE.24.024242</a>.</p><p><br></p>
<p>There are two groups of
files:</p><p></p>
<p>-.PNG/BMP, which
corresponds to the figures</p>
<p>-.CSV, which are raw
data in figures </p>
<p>The work in this paper mainly focus on the development
of gain-bandwidth product APDsby using novel avalanche material. We demonstrate an InGaAs/AlGaAsSb APD, grown on an InP substrate,
with a GBP of 424 GHz, the highest value reported for InP-compatible APDs,
which is applicable to future optical communication systems at or above 10 Gb/s. </p>
<p>The data consists of results from InGaAs/AlGaAsSb
avalanche photodiodes: dark current, photocurrent, frequency response and gain-bandwidth
product. More details about these data/figures can be found in README file.</p>