%0 Generic %A Zhou, Xinxin %A Zhang, Shiyong %A David, John %A Ng, Jo Shien %A Tan, Chee %D 2016 %T Data for paper: Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys %U https://orda.shef.ac.uk/articles/dataset/Data_for_paper_Avalanche_breakdown_characteristics_of_Al1-xGaxAsSb_quaternary_alloys/3479396 %R 10.15131/shef.data.3479396.v2 %2 https://ndownloader.figshare.com/files/5576333 %2 https://ndownloader.figshare.com/files/5556527 %2 https://ndownloader.figshare.com/files/5556530 %2 https://ndownloader.figshare.com/files/5556533 %2 https://ndownloader.figshare.com/files/5556536 %2 https://ndownloader.figshare.com/files/5576332 %2 https://ndownloader.figshare.com/files/5556545 %2 https://ndownloader.figshare.com/files/5556548 %2 https://ndownloader.figshare.com/files/5556551 %2 https://ndownloader.figshare.com/files/5556554 %2 https://ndownloader.figshare.com/files/5576334 %K AlGaAsSb %K breakdown voltage %K Electrical and Electronic Engineering not elsewhere classified %X

The files correspond to experimental results in paper: “Avalanche breakdown characteristics of Al1-xGaxAsSb quaternary alloys” DOI: 10.1109/LPT.2016.2601651.


There are two types of files:

-.PNG, which corresponds to the figures

-.CSV, which are raw data in figures

The work in this paper mainly focus on the experiments to accurately determine avalanche breakdown characteristics of Al1-xGaxAs0.56Sb0.44 for x = 0 to 0.15. The test structures were p-i-n diodes with 100 nm avalanche layers to maximize usefulness of the results for high bandwidth APDs. In addition, due to a lack of experimental reports, this work included experimental confirmation of minimum bandgaps, Eg, of Al1-xGaxAs0.56Sb0.44.

The data consists of results from Al1-xGaxAs0.56Sb0.44 avalanche photodiodes (x = 0 to 0.15): photoresponse, dark current, capacitance, bandgap, avalanche gain and breakdown voltage. More details about these data/figures can be found in README file.



%I The University of Sheffield