Milanov, Andrian Bhakta, Raghunandan Baunemann, Arne Becker, Hans-Werner Thomas, Reji Ehrhart, Peter Winter, Manuela Devi, Anjana Guanidinate-Stabilized Monomeric Hafnium Amide Complexes as Promising Precursors for MOCVD of HfO<sub>2</sub> Novel guanidinato complexes of hafnium [Hf{η<sup>2</sup>-(<sup>i</sup>PrN)<sub>2</sub>CNR<sub>2</sub>}<sub>2</sub>(NR<sub>2</sub>)<sub>2</sub>] (R<sub>2</sub> = Et<sub>2</sub>, <b>1</b>; Et, Me, <b>2</b>; Me<sub>2</sub>, <b>3</b>), synthesized by insertion reactions of <i>N,N</i>‘-diisopropylcarbodiimide into the M−N bonds of homologous hafnium amide complexes <b>1</b>−<b>3</b> and {[μ<sub>2</sub>-NC(NMe<sub>2</sub>)<sub>2</sub>][NC(NMe<sub>2</sub>)<sub>2</sub>]<sub>2</sub>HfCl}<sub>2</sub> (<b>4</b>) using a salt metathesis reaction, are reported. Single-crystal X-ray diffraction analysis revealed that compounds <b>1</b>−<b>3</b> were monomers, while compound <b>4</b> was found to be a dimer. The observed fluxional behavior of compounds <b>1</b>−<b>3</b> was studied in detail using variable-temperature and two-dimensional NMR techniques. The thermal characteristics of compounds <b>1</b>−<b>3</b> seem promising for HfO<sub>2</sub> thin films by vapor deposition techniques. Metal−organic chemical vapor deposition experiments with compound <b>2</b> as the precursor resulted in smooth, uniform, and stoichiometric HfO<sub>2</sub> thin films at relatively low deposition temperatures. The basic properties of HfO<sub>2</sub> thin films were characterized in some detail. HfO 2Novel guanidinato complexes;compound;hafnium;Et;NC;MOCVD;stoichiometric HfO 2;HfO 2;salt metathesis reaction;NMR;film;vapor deposition techniques 2006-12-25
    https://acs.figshare.com/articles/dataset/Guanidinate_Stabilized_Monomeric_Hafnium_Amide_Complexes_as_Promising_Precursors_for_MOCVD_of_HfO_sub_2_sub_/3039181
10.1021/ic061056i.s001