Henderson, Eric J. G. C. Veinot, Jonathan From Phenylsiloxane Polymer Composition to Size-Controlled Silicon Carbide Nanocrystals Silicon carbide (SiC) has become a very important material for many high-performance applications as a result of its exceptional material properties. The emergence of size-dependent properties in SiC nanocrystals (SiC-NCs), together with the increased surface area intrinsic to nanocrystals, has led to a variety of new possible applications, including optoelectronics and hybrid materials. Here we report the straightforward preparation of size-controlled oxide-embedded and freestanding SiC-NCs from the reductive thermal processing of compositionally controlled phenylsiloxane polymers. Compositional tuning of the polymers is achieved by varying the relative amounts of phenyl trichlorosilane (C<sub>6</sub>H<sub>5</sub>SiCl<sub>3</sub>) and silicon tetrachloride (SiCl<sub>4</sub>) during hydrolysis and cocondensation. Thermal processing of the resulting compositionally controlled condensation copolymers yields oxide-embedded SiC-NCs whose average diameter is dependent on the relative C<sub>6</sub>H<sub>5</sub>SiCl<sub>3</sub> concentration in the initial precursor mixture. A liberation procedure for preparing size-controlled freestanding SiC-NCs that involves oxidation of matrix carbon and subsequent chemical etching of the matrix is also presented. surface area;silicon tetrachloride;phenylsiloxane polymers;precursor mixture;SiC nanocrystals;Thermal processing;C 6H;application;liberation procedure;compositionally;C 6H concentration;freestanding;phenyl trichlorosilane;matrix carbon;material properties;chemical etching;Phenylsiloxane Polymer Composition 2009-01-21
    https://acs.figshare.com/articles/journal_contribution/From_Phenylsiloxane_Polymer_Composition_to_Size_Controlled_Silicon_Carbide_Nanocrystals/2884135
10.1021/ja807701y.s001