TY - DATA T1 - High and Balanced Hole and Electron Mobilities from Ambipolar Thin-Film Transistors Based on Nitrogen-Containing Oligoacences PY - 2010/11/24 AU - Yi-Yang Liu AU - Cheng-Li Song AU - Wei-Jing Zeng AU - Kai-Ge Zhou AU - Zi-Fa Shi AU - Chong-Bo Ma AU - Feng Yang AU - Hao-Li Zhang AU - Xiong Gong UR - https://acs.figshare.com/articles/dataset/High_and_Balanced_Hole_and_Electron_Mobilities_from_Ambipolar_Thin_Film_Transistors_Based_on_Nitrogen_Containing_Oligoacences/2710237 DO - 10.1021/ja107046s.s002 L4 - https://ndownloader.figshare.com/files/4386187 KW - μ h KW - cm KW - ambipolar FET properties KW - μ e KW - semiconductor KW - strategy KW - oligoacene KW - material N2 - We demonstrate a strategy for designing high-performance, ambipolar, acene-based field-effect transistor (FET) materials, which is based on the replacement of C−H moieties by nitrogen atoms in oligoacenes. By using this strategy, two organic semiconductors, 6,13-bis(triisopropylsilylethynyl)anthradipyridine (1) and 8,9,10,11-tetrafluoro-6,13-bis(triisopropylsilylethynyl)-1-azapentacene (3), were synthesized and their FET characteristics studied. Both materials exhibit high and balanced hole and electron mobilities, 1 having μh and μe of 0.11 and 0.15 cm2/V·s and 3 having μh and μe of 0.08 and 0.09 cm2/V·s, respectively. The successful demonstration of high and balanced ambipolar FET properties from nitrogen-containing oligoacenes opens up new opportunities for designing high-performance ambipolar organic semiconductors. ER -