10.1021/nl500443j.s001
Nan Liu
Nan
Liu
He Tian
He
Tian
Gregor Schwartz
Gregor
Schwartz
Jeffrey B.-H. Tok
Jeffrey B.-H.
Tok
Tian-Ling Ren
Tian-Ling
Ren
Zhenan Bao
Zhenan
Bao
Large-Area, Transparent, and Flexible Infrared Photodetector
Fabricated Using P‑N Junctions Formed by N‑Doping Chemical
Vapor Deposition Grown Graphene
American Chemical Society
2014
Photodetector Fabricated
IR irradiation
graphene photodetector
CVD
fabrication processes
gated P
chemical vapor deposition
IR photodetectors
2014-07-09 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Large_Area_Transparent_and_Flexible_Infrared_Photodetector_Fabricated_Using_P_N_Junctions_Formed_by_N_Doping_Chemical_Vapor_Deposition_Grown_Graphene/2275843
Graphene
is a highly promising material for high speed, broadband,
and multicolor photodetection. Because of its lack of bandgap, individually
gated P- and N-regions are needed to fabricate photodetectors. Here
we report a technique for making a large-area photodetector on the
basis of controllable fabrication of graphene P-N junctions. Our selectively
doped chemical vapor deposition (CVD) graphene photodetector showed
a ∼5% modulation of conductance under global IR irradiation.
By comparing devices of various geometries, we identify that both
the homogeneous and the P-N junction regions contribute competitively
to the photoresponse. Furthermore, we demonstrate that our two-terminal
graphene photodetector can be fabricated on both transparent and flexible
substrates without the need for complex fabrication processes used
in electrically gated three-terminal devices. This represents the
first demonstration of a fully transparent and flexible graphene-based
IR photodetector that exhibits both good photoresponsivity and high
bending capability. This simple approach should facilitate the development
of next generation high-performance IR photodetectors.