10.1021/nl500443j.s001 Nan Liu Nan Liu He Tian He Tian Gregor Schwartz Gregor Schwartz Jeffrey B.-H. Tok Jeffrey B.-H. Tok Tian-Ling Ren Tian-Ling Ren Zhenan Bao Zhenan Bao Large-Area, Transparent, and Flexible Infrared Photodetector Fabricated Using P‑N Junctions Formed by N‑Doping Chemical Vapor Deposition Grown Graphene American Chemical Society 2014 Photodetector Fabricated IR irradiation graphene photodetector CVD fabrication processes gated P chemical vapor deposition IR photodetectors 2014-07-09 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Large_Area_Transparent_and_Flexible_Infrared_Photodetector_Fabricated_Using_P_N_Junctions_Formed_by_N_Doping_Chemical_Vapor_Deposition_Grown_Graphene/2275843 Graphene is a highly promising material for high speed, broadband, and multicolor photodetection. Because of its lack of bandgap, individually gated P- and N-regions are needed to fabricate photodetectors. Here we report a technique for making a large-area photodetector on the basis of controllable fabrication of graphene P-N junctions. Our selectively doped chemical vapor deposition (CVD) graphene photodetector showed a ∼5% modulation of conductance under global IR irradiation. By comparing devices of various geometries, we identify that both the homogeneous and the P-N junction regions contribute competitively to the photoresponse. Furthermore, we demonstrate that our two-terminal graphene photodetector can be fabricated on both transparent and flexible substrates without the need for complex fabrication processes used in electrically gated three-terminal devices. This represents the first demonstration of a fully transparent and flexible graphene-based IR photodetector that exhibits both good photoresponsivity and high bending capability. This simple approach should facilitate the development of next generation high-performance IR photodetectors.