Rosmus, Kimberly A. Brant, Jacilynn A. Wisneski, Stephen D. Clark, Daniel J. Kim, Yong Soo Jang, Joon I. Brunetta, Carl D. Zhang, Jian-Han Srnec, Matthew N. Aitken, Jennifer A. Optical Nonlinearity in Cu<sub>2</sub>CdSnS<sub>4</sub> and α/β-Cu<sub>2</sub>ZnSiS<sub>4</sub>: Diamond-like Semiconductors with High Laser-Damage Thresholds Cu<sub>2</sub>CdSnS<sub>4</sub> and α/β-Cu<sub>2</sub>ZnSiS<sub>4</sub> meet several criteria for promising nonlinear optical materials for use in the infrared (IR) region. Both are air-stable, crystallize in noncentrosymmetric space groups, and possess high thermal stabilities. Cu<sub>2</sub>CdSnS<sub>4</sub> and α/β-Cu<sub>2</sub>ZnSiS<sub>4</sub> display wide ranges of optical transparency, 1.4–25 and 0.7–25 μm, respectively, and have relatively large second-order nonlinearity as well as phase matchability for wide regions in the IR. The laser-damage threshold (LDT) for Cu<sub>2</sub>CdSnS<sub>4</sub> is 0.2 GW/cm<sup>2</sup>, whereas α/β-Cu<sub>2</sub>ZnSiS<sub>4</sub> has a LDT of 2.0 GW/cm<sup>2</sup> for picosecond near-IR excitation. Both compounds also exhibit efficient third-order nonlinearity. Electronic structure calculations provide insight into the variation in properties. noncentrosymmetric space groups;Cu 2CdSnS;Electronic structure calculations;2ZnSiS;GW;IR;LDT 2014-08-04
    https://acs.figshare.com/articles/journal_contribution/Optical_Nonlinearity_in_Cu_sub_2_sub_CdSnS_sub_4_sub_and_Cu_sub_2_sub_ZnSiS_sub_4_sub_Diamond_like_Semiconductors_with_High_Laser_Damage_Thresholds/2268784
10.1021/ic501310d.s001