Electrical
Characteristics of Metal Catalyst-Assisted
Etched Rough Silicon Nanowire Depending on the Diameter Size
Sang Hoon Lee
Tae Il Lee
Su Jeong Lee
Sang Myung Lee
Ilgu Yun
Jae Min Myoung
10.1021/am507478q.s001
https://acs.figshare.com/articles/journal_contribution/Electrical_Characteristics_of_Metal_Catalyst_Assisted_Etched_Rough_Silicon_Nanowire_Depending_on_the_Diameter_Size/2216005
The
dependence of electrical properties of rough and cylindrical
Si nanowires (NWs) synthesized by diameter-controllable metal catalyst-assisted
etching (MCE) on the size of the NW’s diameter was demonstrated.
Using a decal-printing and transfer process assisted by Al<sub>2</sub>O<sub>3</sub> sacrificial layer, the Si NW field effect transistor
(FET) embedded in a polyvinylphenol adhesive and dielectric layer
were fabricated. As the diameter of Si NW increased, the mobility
of FET increased from 80.51 to 170.95 cm<sup>2</sup>/V·s and
the threshold voltage moved from −7.17 to 0 V because phonon–electron
wave function overlaps, surface scattering, and defect scattering
decreased and gate coupling increased as the ratio of surface-to-volume
got reduced.
2015-01-14 00:00:00
diameter
Silicon Nanowire
Si nanowires
transfer process
dielectric layer
Diameter SizeThe dependence
Electrical Characteristics
FET
0 V
Al 2O
Si NW
MCE
Si NW field effect transistor
threshold voltage