Na, Seung Ryul Suk, Ji Won Tao, Li Akinwande, Deji Ruoff, Rodney S. Huang, Rui Liechti, Kenneth M. Selective Mechanical Transfer of Graphene from Seed Copper Foil Using Rate Effects A very fast, dry transfer process based on mechanical delamination successfully effected the transfer of large-area, CVD grown graphene on copper foil to silicon. This has been achieved by bonding silicon backing layers to both sides of the graphene-coated copper foil with epoxy and applying a suitably high separation rate to the backing layers. At the highest separation rate considered (254.0 μm/s), monolayer graphene was completely transferred from the copper foil to the target silicon substrate. On the other hand, the lowest rate (25.4 μm/s) caused the epoxy to be completely separated from the graphene. Fracture mechanics analyses were used to determine the adhesion energy between graphene and its seed copper foil (6.0 J/m<sup>2</sup>) and between graphene and the epoxy (3.4 J/m<sup>2</sup>) at the respective loading rates. Control experiments for the epoxy/silicon interface established a rate dependent adhesion, which supports the hypothesis that the adhesion of the graphene/epoxy interface was higher than that of the graphene/copper interface at the higher separation rate, thereby providing a controllable mechanism for selective transfer of graphene in future nanofabrication systems such as roll-to-roll transfer. Selective Mechanical Transfer;graphene;Seed Copper Foil;CVD;transfer;adhesion;separation rate;Fracture mechanics analyses;copper foil;interface;target silicon substrate;future nanofabrication systems 2015-02-24
    https://acs.figshare.com/articles/journal_contribution/Selective_Mechanical_Transfer_of_Graphene_from_Seed_Copper_Foil_Using_Rate_Effects/2193328
10.1021/nn505178g.s001