10.1021/acsami.5b00091.s001
Xichang Bao
Xichang
Bao
Qianqian Zhu
Qianqian
Zhu
Ting Wang
Ting
Wang
Jing Guo
Jing
Guo
Chunpeng Yang
Chunpeng
Yang
Donghong Yu
Donghong
Yu
Ning Wang
Ning
Wang
Weichao Chen
Weichao
Chen
Renqiang Yang
Renqiang
Yang
Simple
O<sub>2</sub> Plasma-Processed V<sub>2</sub>O<sub>5</sub> as an Anode
Buffer Layer for High-Performance Polymer
Solar Cells
American Chemical Society
2015
annealed V 2O
V 2O layer
O 2 plasma treatment
ITO
anode buffer layer
power conversion efficiencies
O 2 plasma
PCE
indium tin oxide
V 2O
PEDOT
PSC
charge transport property
Anode Buffer Layer
V 2O anode buffer layer
3HT
O 2 plasma processing method
anode buffer layer show
AM
2015-04-15 00:00:00
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Simple_O_sub_2_sub_Plasma_Processed_V_sub_2_sub_O_sub_5_sub_as_an_Anode_Buffer_Layer_for_High_Performance_Polymer_Solar_Cells/2176297
A simple
O<sub>2</sub> plasma processing method for preparation
of a vanadium oxide (V<sub>2</sub>O<sub>5</sub>) anode buffer layer
on indium tin oxide (ITO)-coated glass for polymer solar cells (PSCs)
is reported. The V<sub>2</sub>O<sub>5</sub> layer with high transmittance
and good electrical and interfacial properties was prepared by spin
coating a vanadium(V) triisopropoxide oxide alcohol solution on ITO
and then O<sub>2</sub> plasma treatment for 10 min [V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma)]. PSCs based on P3HT:PC<sub>61</sub>BM and PBDTTT-C:PC<sub>71</sub>BM using V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma) as an anode buffer layer show high power
conversion efficiencies (PCEs) of 4.47 and 7.54%, respectively, under
the illumination of AM 1.5G (100 mW/cm<sup>2</sup>). Compared to that
of the control device with PBDTTT-C:PC<sub>71</sub>BM as the active
layer and PEDOT:PSS (PCE of 6.52%) and thermally annealed V<sub>2</sub>O<sub>5</sub> (PCE of 6.27%) as the anode buffer layer, the PCE was
improved by 15.6 and 20.2%, respectively, after the introduction of
a V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma) anode buffer layer.
The improved PCE is ascribed to the greatly improved fill factor and
enhanced short-circuit current density of the devices, which benefited
from the change in the work function of V<sub>2</sub>O<sub>5</sub>, a surface with many dangling bonds for better interfacial contact,
and the excellent charge transport property of the V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma) layer. The results indicate that an
O<sub>2</sub> plasma-processed V<sub>2</sub>O<sub>5</sub> film is
an efficient and economical anode buffer layer for high-performance
PSCs. It also provides an attractive choice for low-cost fabrication
of organic electronics.