10.1021/acsami.5b00091.s001 Xichang Bao Xichang Bao Qianqian Zhu Qianqian Zhu Ting Wang Ting Wang Jing Guo Jing Guo Chunpeng Yang Chunpeng Yang Donghong Yu Donghong Yu Ning Wang Ning Wang Weichao Chen Weichao Chen Renqiang Yang Renqiang Yang Simple O<sub>2</sub> Plasma-Processed V<sub>2</sub>O<sub>5</sub> as an Anode Buffer Layer for High-Performance Polymer Solar Cells American Chemical Society 2015 annealed V 2O V 2O layer O 2 plasma treatment ITO anode buffer layer power conversion efficiencies O 2 plasma PCE indium tin oxide V 2O PEDOT PSC charge transport property Anode Buffer Layer V 2O anode buffer layer 3HT O 2 plasma processing method anode buffer layer show AM 2015-04-15 00:00:00 Journal contribution https://acs.figshare.com/articles/journal_contribution/Simple_O_sub_2_sub_Plasma_Processed_V_sub_2_sub_O_sub_5_sub_as_an_Anode_Buffer_Layer_for_High_Performance_Polymer_Solar_Cells/2176297 A simple O<sub>2</sub> plasma processing method for preparation of a vanadium oxide (V<sub>2</sub>O<sub>5</sub>) anode buffer layer on indium tin oxide (ITO)-coated glass for polymer solar cells (PSCs) is reported. The V<sub>2</sub>O<sub>5</sub> layer with high transmittance and good electrical and interfacial properties was prepared by spin coating a vanadium­(V) triisopropoxide oxide alcohol solution on ITO and then O<sub>2</sub> plasma treatment for 10 min [V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma)]. PSCs based on P3HT:PC<sub>61</sub>BM and PBDTTT-C:PC<sub>71</sub>BM using V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma) as an anode buffer layer show high power conversion efficiencies (PCEs) of 4.47 and 7.54%, respectively, under the illumination of AM 1.5G (100 mW/cm<sup>2</sup>). Compared to that of the control device with PBDTTT-C:PC<sub>71</sub>BM as the active layer and PEDOT:PSS (PCE of 6.52%) and thermally annealed V<sub>2</sub>O<sub>5</sub> (PCE of 6.27%) as the anode buffer layer, the PCE was improved by 15.6 and 20.2%, respectively, after the introduction of a V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma) anode buffer layer. The improved PCE is ascribed to the greatly improved fill factor and enhanced short-circuit current density of the devices, which benefited from the change in the work function of V<sub>2</sub>O<sub>5</sub>, a surface with many dangling bonds for better interfacial contact, and the excellent charge transport property of the V<sub>2</sub>O<sub>5</sub> (O<sub>2</sub> plasma) layer. The results indicate that an O<sub>2</sub> plasma-processed V<sub>2</sub>O<sub>5</sub> film is an efficient and economical anode buffer layer for high-performance PSCs. It also provides an attractive choice for low-cost fabrication of organic electronics.