%0 Journal Article
%A Docherty, Callum J.
%A Parkinson, Patrick
%A Joyce, Hannah J.
%A Chiu, Ming-Hui
%A Chen, Chang-Hsiao
%A Lee, Ming-Yang
%A Li, Lain-Jong
%A Herz, Laura M.
%A Johnston, Michael B.
%D 2015
%T Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition
%U https://acs.figshare.com/articles/journal_contribution/Ultrafast_Transient_Terahertz_Conductivity_of_Monolayer_MoS_sub_2_sub_and_WSe_sub_2_sub_Grown_by_Chemical_Vapor_Deposition/2044473
%R 10.1021/nn5034746.s001
%2 https://ndownloader.figshare.com/files/3615792
%K Monolayer MoS 2
%K Ultrafast Transient Terahertz Conductivity
%K trilayer MoS 2
%K terahertz spectroscopy
%K monolayer WSe 2.
%K optoelectronic materials
%K photoluminescence response time
%K 350 fs
%K WSe 2
%K 1 ps
%K ultrafast charge carrier dynamics
%K Chemical Vapor DepositionWe
%K transition metal dichalcogenides MoS 2
%K WSe 2 Grown
%X We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials.
%I ACS Publications