%0 Journal Article %A Docherty, Callum J. %A Parkinson, Patrick %A Joyce, Hannah J. %A Chiu, Ming-Hui %A Chen, Chang-Hsiao %A Lee, Ming-Yang %A Li, Lain-Jong %A Herz, Laura M. %A Johnston, Michael B. %D 2015 %T Ultrafast Transient Terahertz Conductivity of Monolayer MoS2 and WSe2 Grown by Chemical Vapor Deposition %U https://acs.figshare.com/articles/journal_contribution/Ultrafast_Transient_Terahertz_Conductivity_of_Monolayer_MoS_sub_2_sub_and_WSe_sub_2_sub_Grown_by_Chemical_Vapor_Deposition/2044473 %R 10.1021/nn5034746.s001 %2 https://ndownloader.figshare.com/files/3615792 %K Monolayer MoS 2 %K Ultrafast Transient Terahertz Conductivity %K trilayer MoS 2 %K terahertz spectroscopy %K monolayer WSe 2. %K optoelectronic materials %K photoluminescence response time %K 350 fs %K WSe 2 %K 1 ps %K ultrafast charge carrier dynamics %K Chemical Vapor DepositionWe %K transition metal dichalcogenides MoS 2 %K WSe 2 Grown %X We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS2 and WSe2 using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS2, and 1 ps from trilayer MoS2 and monolayer WSe2. Our results indicate the potential of these materials as high-speed optoelectronic materials. %I ACS Publications