10.1021/nn5034746.s001 Callum J. Docherty Callum J. Docherty Patrick Parkinson Patrick Parkinson Hannah J. Joyce Hannah J. Joyce Ming-Hui Chiu Ming-Hui Chiu Chang-Hsiao Chen Chang-Hsiao Chen Ming-Yang Lee Ming-Yang Lee Lain-Jong Li Lain-Jong Li Laura M. Herz Laura M. Herz Michael B. Johnston Michael B. Johnston Ultrafast Transient Terahertz Conductivity of Monolayer MoS<sub>2</sub> and WSe<sub>2</sub> Grown by Chemical Vapor Deposition American Chemical Society 2015 Monolayer MoS 2 Ultrafast Transient Terahertz Conductivity trilayer MoS 2 terahertz spectroscopy monolayer WSe 2. optoelectronic materials photoluminescence response time 350 fs WSe 2 1 ps ultrafast charge carrier dynamics Chemical Vapor DepositionWe transition metal dichalcogenides MoS 2 WSe 2 Grown 2015-12-17 06:02:22 Journal contribution https://acs.figshare.com/articles/journal_contribution/Ultrafast_Transient_Terahertz_Conductivity_of_Monolayer_MoS_sub_2_sub_and_WSe_sub_2_sub_Grown_by_Chemical_Vapor_Deposition/2044473 We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS<sub>2</sub> and WSe<sub>2</sub> using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS<sub>2</sub>, and 1 ps from trilayer MoS<sub>2</sub> and monolayer WSe<sub>2</sub>. Our results indicate the potential of these materials as high-speed optoelectronic materials.