10.1021/nn5034746.s001
Callum J. Docherty
Callum J.
Docherty
Patrick Parkinson
Patrick
Parkinson
Hannah J. Joyce
Hannah J.
Joyce
Ming-Hui Chiu
Ming-Hui
Chiu
Chang-Hsiao Chen
Chang-Hsiao
Chen
Ming-Yang Lee
Ming-Yang
Lee
Lain-Jong Li
Lain-Jong
Li
Laura M. Herz
Laura M.
Herz
Michael B. Johnston
Michael B.
Johnston
Ultrafast Transient Terahertz Conductivity of Monolayer MoS<sub>2</sub> and WSe<sub>2</sub> Grown by Chemical Vapor Deposition
American Chemical Society
2015
Monolayer MoS 2
Ultrafast Transient Terahertz Conductivity
trilayer MoS 2
terahertz spectroscopy
monolayer WSe 2.
optoelectronic materials
photoluminescence response time
350 fs
WSe 2
1 ps
ultrafast charge carrier dynamics
Chemical Vapor DepositionWe
transition metal dichalcogenides MoS 2
WSe 2 Grown
2015-12-17 06:02:22
Journal contribution
https://acs.figshare.com/articles/journal_contribution/Ultrafast_Transient_Terahertz_Conductivity_of_Monolayer_MoS_sub_2_sub_and_WSe_sub_2_sub_Grown_by_Chemical_Vapor_Deposition/2044473
We have measured ultrafast charge carrier dynamics in monolayers and trilayers of the transition metal dichalcogenides MoS<sub>2</sub> and WSe<sub>2</sub> using a combination of time-resolved photoluminescence and terahertz spectroscopy. We recorded a photoconductivity and photoluminescence response time of just 350 fs from CVD-grown monolayer MoS<sub>2</sub>, and 1 ps from trilayer MoS<sub>2</sub> and monolayer WSe<sub>2</sub>. Our results indicate the potential of these materials as high-speed optoelectronic materials.