Aluminum, gallium and indium thiobenzoates: synthesis, characterization and crystal structures JaśkowskaEliza DobrzyckiŁukasz RzepińskiPatryk ZiemkowskaWanda 2015 <div><p>Compounds R<sub>2</sub>M[S(O)CPh] [where R = <sup><i>t</i></sup>Bu, M = Al (<b>1</b>); R = <sup><i>t</i></sup>Bu, M = Ga (<b>2</b>); R = Me, M = Ga (<b>3</b>)] have been synthesized in reactions of R<sub>3</sub>M with thiobenzoic acid in a 1:1 molar ratio of reagents. The reaction of Me<sub>3</sub>Ga with three equivalents of thiobenzoic acid yielded the compound Ga[S(O)CPh]<sub>3</sub> (<b>4</b>), in which thiobenzoate moieties act as bidentate SO ligands. In the presence of Et<sub>3</sub>N, InCl<sub>3</sub> reacted with thiobenzoic acid with formation of an ionic compound {In[S(O)CPh]<sub>4</sub>}<sup>−</sup>(HNEt<sub>3</sub>)<sup>+</sup> (<b>5</b>). The thiobenzoate ligands are bonded with the metallic center via the sulfur atoms only. The compounds <b>4</b> and <b>5</b> have been structurally and thermally studied. The thermal decomposition pathways of compounds <b>4</b> and <b>5</b> are proposed.</p></div>