%0 Figure %A Vandevraye, M %A Drag, C %A Blondel, C %D 2013 %T Level scheme of the Sn/Sn system %U https://iop.figshare.com/articles/figure/_Level_scheme_of_the_Sn_Sn_sup_sup_system/1011957 %R 10.6084/m9.figshare.1011957.v1 %2 https://ndownloader.figshare.com/files/1479782 %K threshold %K label %K sn %K photodetachment %K transition %K electron affinity %K ion %K laser %K 2 D levels %K Atomic Physics %K Molecular Physics %X

Figure 1. Level scheme of the Sn/Sn system. eA labels the ground-to-ground detachment transition that defines the electron affinity; 'measured' labels the transition measured in this study. The 2D levels of Sn, which do not play any role in this work, were observed by Scheer et al (1998).

Abstract

A beam of Sn ions produced by a caesium sputtering ion source is photodetached in the presence of an electric field, with a single-mode ring Ti:Sa laser. The laser wavelength, about 806 nm, is set just above the excitation threshold of the 3P2, highest fine-structure sublevel of the 3P ground-term of Sn I. The photoelectron energy is measured by photodetachment microscopy. The measured photodetachment threshold is 1239 711.8 (11) m−1, from which an improved value of the electron affinity of tin can be deduced: 896 944.7 (13) m−1 or 1.112 070 (2) eV.

%I IOP Publishing